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| Fast Recovery Diodes (FRD) MA3G655 Silicon planar type (cathode common) Unit : mm 0.7 For switching circuits I Features * High reverse voltage VR * Low forward voltage VF * Fast reverse recovery time trr 15.0 0.3 11.0 0.2 5.0 0.2 3.2 21.0 0.5 15.0 0.2 3.2 0.1 16.2 0.5 12.5 3.5 Solder Dip 2.0 0.2 2.0 0.1 0.6 0.2 I Absolute Maximum Ratings Ta = 25C Parameter Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM VRSM IF(AV) IFSM Tj Tstg Rating 300 300 20 150 -40 to +150 -40 to +150 Unit V V A A C C 1.1 0.1 5.45 0.3 10.9 0.5 1 2 3 1 : Anode 2 : Cathode (Common) 3 : Anode TOP-3F(a) (TOP-3 Full Pack Package) Internal Connection Note) * : Half sine-wave; 10 ms/cycle 1 2 3 I Electrical Characteristics Ta = 25C Parameter Repetitive peak reverse current Symbol IRRM1 IRRM2 Forward voltage (DC) Reverse recovery time* Thermal resistance VF trr Rth(j-c) Rth(j-a) Note) 1. Rated input/output frequency: 10 MHz 2. * : trr measuring circuit Conditions VRRM = 300 V, TC = 25C VRRM = 300 V, Tj = 150C IF = 10 A, TC = 25C IF = 1 A, IR = 1 A Direct current (between junction and case) Min Typ Max 20 5 1 50 1.5 40 Unit A mA V ns C/W C/W 50 50 trr IF D.U.T 5.5 IR 0.1 x IR 1 MA3G655 IF V F 100 107 106 Fast Recovery Diodes (FRD) IR V R 60 PD(AV) IF(AV) Average forward power PD(AV) (W) t0 t1 Ta = 150C 50 Forward current IF (A) 10 Reverse current IR (nA) Ta = 150C 25C 100C 105 104 103 102 100C 40 t0 / t1 = 1/6 30 1/3 1/2 DC 1 25C 20 0.1 10 10 0.01 0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250 300 350 0 0 4 8 12 16 20 24 Forward voltage VF (V) Reverse voltage VR (V) Average forward current IF(AV) (A) IF(AV) TC 24 Rth(t) t 102 Without heat sink Average forward current IF(AV) (A) 1/3 1/6 16 DC Thermal resistance Rth (C/W) 20 t0 / t1 = 1/2 10 12 1 8 10-1 4 t0 t1 0 30 50 100 150 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Case temperature TC (C) Time t (s) 2 |
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